參數(shù)資料
型號(hào): UNR111H
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 543K
代理商: UNR111H
2
UNR111x
SJH00001BJD
T
a
=
25
°
C
±
3
°
C
(E
)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
50
50
V
(B
)
V
(E
)
I
CBO
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
μ
A
μ
A
(B
)
I
CEO
I
EBO
UNR1111
mA
UNR1112/1114/111D/111E
UNR1113
(C
)
UNR1110/1115/1116/1117
UNR111F/111H
UNR1119
UNR1118/111L
UNR1111
h
FE
V
CE
=
10 V, I
C
=
5 mA
35
UNR1112/111E
60
UNR1113/1114
80
160
UNR1110
*
/1115
*
/1116
*
/
1117
*
460
UNR1118/111L
20
UNR1119/111D/111F/111H
30
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
V
OH
4.9
V
V
OL
0.2
V
UNR1113
UNR111D
UNR111E
f
T
80
MHz
UNR1111/1114/1115
R
1
30%
10
+
30%
k
UNR1112/1117
22
UNR1110/1113/111D/111E
47
UNR1116/111F/111L
4.7
UNR1118
0.51
UNR1119
1
UNR111H
2.2
UNR1111/1112/1113/111L
R
1
/R
2
0.8
1.0
1.2
UNR1114
0.17
0.21
0.25
UNR1118/1119
0.08
0.1
0.12
UNR111D
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17
0.22
0.27
Q
R
S
h
FE
160
260
210
340
290
460
) 1.
JIS C 7030
2. * :
(UNR1110/1115/1116/1117)
相關(guān)PDF資料
PDF描述
UN111H Composite Device - Transistors with built-in Resistor
UNR111L Composite Device - Transistors with built-in Resistor
UN111L Composite Device - Transistors with built-in Resistor
UNR112Y(UN112Y) POWER SCHOTTKY RECTIFIER
UN1110Q Quad 2-input and gate (open drain)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR111H(UN111H) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR111L 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
UNR111L(UN111L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ