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參數(shù)資料
| 型號(hào)： | UNR1118 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 354K |
| 代理商： | UNR1118 |
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2
UNR111x Series
SJH00001BED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
50
50
V
Collector-emitter voltage (Base open)
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
Emitter-base
UNR1111
mA
cutoff current
UNR1112/1114/111D/111E
(Collector open)
UNR1113
UNR1110/1115/1116/1117
UNR111F/111H
UNR1119
UNR1118/111L
Forward current
UNR1111
h
FE
V
CE
=
10 V, I
C
=
5 mA
35
transfer ratio
UNR1112/111E
60
UNR1113/1114
80
UNR1110
*
/1115
*
/1116
*
/
1117
*
160
460
UNR1118/111L
20
UNR1119/111D/111F/111H
30
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
0.2
V
UNR1113
UNR111D
UNR111E
Transition frequency
f
T
80
MHz
Input resistance
UNR1111/1114/1115
R
1
30%
10
+
30%
k
UNR1112/1117
22
UNR1110/1113/111D/111E
47
UNR1116/111F/111L
4.7
UNR1118
0.51
UNR1119
1
UNR111H
2.2
Resistance ratio
UNR1111/1112/1113/111L
R
1
/R
2
0.8
1.0
1.2
UNR1114
0.17
0.21
0.25
UNR1118/1119
0.08
0.1
0.12
UNR111D
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17
0.22
0.27
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification (UNR1110/1115/1116/1117)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR1119 | Silicon PNP epitaxial planer transistor |
| UNR111D | Silicon PNP epitaxial planer transistor |
| UNR111E | Silicon PNP epitaxial planer transistor |
| UNR111F | Silicon PNP epitaxial planer transistor |
| UNR111H | Silicon PNP epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR1118(UN1118) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR1119 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR1119(UN1119) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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