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| 型號： | UNA0235 |
| 英文描述： | Composite Device - Small Signal Transistor Arrays |
| 中文描述： | 復(fù)合設(shè)備-小信號晶體管陣列 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | UNA0235 |
2
Small Signal Transistor Arrays
UNA0206
I
Electrical Characteristics
(Ta=25
±
2C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
(NPN) V
CB
= 20V, I
E
= 0
(PNP) V
CB
= –20V, I
E
= 0
(NPN) V
CE
= 18V, R
BE
= 100k
(PNP) V
CE
= –18V, R
BE
= 100k
(NPN) I
C
= 10
μ
A, I
E
= 0
(PNP) I
C
= –10
μ
A, I
E
= 0
(NPN) I
C
= 1mA, I
B
= 0
(PNP) I
C
= –1mA, I
B
= 0
(NPN) I
E
= 10
μ
A, I
C
= 0
(PNP) I
E
= –10
μ
A, I
C
= 0
I
F
= 1A
(NPN) V
CE
= 2V, I
C
= 0.5A*
(PNP) V
CE
= –2V, I
C
= – 0.5A*
(NPN) V
CE
= 2V, I
C
= 1.5A*
(PNP) V
CE
= –2V, I
C
= – 1.5A*
(NPN) I
C
= 0.3A, I
B
= 10mA
(PNP) I
C
= – 0.3A, I
B
= –10mA
(NPN) I
C
= 0.7A, I
B
= 10mA
(PNP) I
C
= – 0.7A, I
B
= –10mA
1
μ
A
–1
Collector cutoff current
I
CER
10
μ
A
–10
Collector to base voltage
V
CBO
20
V
–20
Collector to emitter voltage
V
CEO
18
V
–18
Emitter to base voltage
V
EBO
5
V
–5
Forward voltage (DC)
V
F
1.5
V
Forward current transfer ratio
h
FE1
90
360
90
360
Forward current transfer ratio
h
FE2
50
50
Collector to emitter saturation voltage
V
CE(sat)1
0.2
V
– 0.2
Collector to emitter saturation voltage
V
CE(sat)2
0.6
V
– 0.6
Transition frequency
f
T
(NPN) V
CB
= 6V, I
E
= 50mA, f = 200MHz
150
MHz
(PNP) V
CB
= –6V, I
E
= –50mA, f = 200MHz
(NPN) V
CB
= 6V, I
E
= 0, f = 1MHz
(PNP) V
CB
= –6V, I
E
= 0, f = 1MHz
200
Collector output capacitance
C
ob
20
pF
40
*Pulse measurement
Characteristics charts of PNP transistor block
P
T
— Ta
I
C
— V
CE
I
C
— V
BE
0
0
160
20
60
100
140
40
120
80
0.6
0.5
0.4
0.3
0.2
0.1
Ambient temperature Ta (C)
T
T
0
0
–12
–2
–10
–4
–8
–6
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
–8mA
–6mA
–4mA
–2mA
–12mA
–10mA
I
B
=–14mA
0
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
Base to emitter voltage V
BE
(V)
C
C
0
–2.4
–0.4
–2.0
–0.8
–1.6
–1.2
V
CE
=–2V
Ta=75C
–25C
25C
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