參數(shù)資料
型號(hào): UN921N
英文描述: TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
中文描述: 晶體管| 50V五(巴西)總裁| 100mA的一(c)|的SOT - 416
文件頁數(shù): 1/16頁
文件大小: 259K
代理商: UN921N
1
Transistors with built-in Resistor
UNR9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/921M/921N/921AJ/921BJ/921CJ
(UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/921E/921F/
921K/921L/921M/921N/921AJ/921BJ/921CJ)
Silicon NPN epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
G
UNR9211
G
UNR9212
G
UNR9213
G
UNR9214
G
UNR9215
G
UNR9216
G
UNR9217
G
UNR9218
G
UNR9219
G
UNR9210
G
UNR921D
G
UNR921E
G
UNR921F
G
UNR921K
G
UNR921L
G
UNR921M
G
UNR921N
G
UNR921AJ
G
UNR921BJ
G
UNR921CJ
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
10k
4.7k
2.2k
4.7k
100k
100k
(R
2
)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
4.7k
4.7k
47k
47k
100k
47k
8A
8B
8C
8D
8E
8F
8H
8I
8K
8L
8M
8N
8O
8P
8Q
EL
EX
8X
8Y
8Z
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
50
V
Collector to emitter voltage
50
V
Collector current
I
C
P
T
T
j
100
mA
Total power dissipation
125
mW
Junction temperature
125
C
Storage temperature
T
stg
–55 to +125
C
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
1.6
±
0.15
1
±
0
1
±
0
0
±
0
0
±
0
0
0
0
0
0.8
±
0.1
0.4
0.4
0
+
-
0
+
-
1
2
3
0.2
±
0.1
B
C
R1
R2
E
Unit: mm
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
1
+
0
+
0
+
0
0
0
0
0
1.60
±
0.05
0.80
0.425 0.425
0.80
±
0.05
1
±
0
0
±
0
0.85
+0.05
Note.) The Part numbers in the Parenthesis show conventional part number.
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