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參數(shù)資料
| 型號： | UN8231A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 32K |
| 代理商： | UN8231A |
1
Transistors with built-in Resistor
UN8231/UN8231A
Silicon NPN epitaxial planer transistor
For switching
I
Features
G
High forward current transfer ratio h
FE
.
G
Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
G
Available in a type with radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
1 : Emitter
2 : Collector
3 : Base
MT-2 Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
UN8231
V
CBO
20
V
UN8231A
60
UN8231
V
CEO
20
V
UN8231A
50
Peak collector current
I
CP
I
C
P
T
*
T
j
T
stg
1.5
A
Collector current
0.7
A
Total power dissipation
1
W
Junction temperature
150
C
Storage temperature
–55 to +150
C
B
C
R1(1k
)
R2
(47k
)
E
Collector to
base voltage
Collector to
emitter voltage
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
V
EB
= 14V, I
C
= 0
1
μ
A
μ
A
Collector cutoff current
10
Emitter cutoff current
0.5
mA
Collector to base voltage
UN8231
V
CBO
I
C
= 10
μ
A, I
E
= 0
20
V
UN8231A
60
Collector to emitter voltage
UN8231
V
CEO
I
C
= 1mA, I
B
= 0
20
V
UN8231A
50
Forward current transfer ratio
h
FE
*
V
CE(sat)
*
R
1
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 5mA
800
2100
Collector to emitter saturation voltage
0.4
V
Input resistance
0.7
1
1.3
k
Resistance ratio
R
1
/R
2
0.016
0.021
0.025
Transition frequency
f
T
V
CB
= 10V, I
E
= –50mA, f = 200MHz
200
MHz
* Printed circuit board: Copper foil area of 1cm
2
or more and thickness of
1.7mm for the collector portion.
*Pulse measurement
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
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