參數(shù)資料
型號: UN421E
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 12/14頁
文件大?。?/td> 540K
代理商: UN421E
12
Transistors with built-in Resistor
Characteristics charts of UNR421K
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
V
IN
— I
O
Characteristics charts of UNR421L
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.2mA
1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
0
1
6
5
4
3
2
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
0.01
0.1
0.3
Output current I
O
(mA)
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.0mA
0.8mA
0.2mA
0.4mA
0.6mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
相關PDF資料
PDF描述
UNR421F Composite Device - Transistors with built-in Resistor
UN421F Composite Device - Transistors with built-in Resistor
UNR421K Composite Device - Transistors with built-in Resistor
UN421K Composite Device - Transistors with built-in Resistor
UNR421L Composite Device - Transistors with built-in Resistor
相關代理商/技術參數(shù)
參數(shù)描述
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