參數(shù)資料
型號: UN4219
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 3/14頁
文件大?。?/td> 540K
代理商: UN4219
3
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Common characteristics chart
P
T
— Ta
Characteristics charts of UNR4211
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
40
120
80
160
140
100
60
20
C
C
Ta=25
C
I
0.1mA
0.2mA
0.3mA
0.4mA
000.5mA
00=1.0mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
100
200
300
400
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
1
0.4
3
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=5V
Ta=25
C
0.01
0.03
0.1
0.3
Output current I
O
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
0
0
160
20
60
100
140
40
120
80
100
300
200
400
350
250
150
50
Ambient temperature Ta (
C)
T
T
相關(guān)PDF資料
PDF描述
UNR421D Composite Device - Transistors with built-in Resistor
UN421D Composite Device - Transistors with built-in Resistor
UNR421E Composite Device - Transistors with built-in Resistor
UN421E Composite Device - Transistors with built-in Resistor
UNR421F Composite Device - Transistors with built-in Resistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UN421D 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN421E 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor
UN421F 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor
UN421FTA 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN421K 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor