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參數(shù)資料
| 型號(hào)： | UN4217 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 540K |
| 代理商： | UN4217 |
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2
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
μ
A
μ
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
UNR4211
0.5
UNR4212/4214/421E/421D
0.2
UNR4213
0.1
UNR4215/4216/4217/4210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UNR421F/421K
1.0
UNR4219
1.5
UNR4218/421L
2.0
Collector to base voltage
V
CBO
I
C
= 10
μ
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR4211
35
UNR4212/421E
60
UNR4213/4214
h
FE
V
CE
= 10V, I
C
= 5mA
80
UNR4215*/4216*/4217*/4210*
160
460
UNR421F/421D/4219
30
UNR4218/421K/421L
20
Collector to emitter saturation voltage
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
V
CC
= 5V, V
B
= 10V, R
L
= 1k
V
CC
= 5V, V
B
= 6V, R
L
= 1k
V
CB
= 10V, I
E
= –2mA, f = 200MHz
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
UNR4213/421K
V
OL
0.2
V
UNR421D
0.2
UNR421E
0.2
Transition frequency
f
T
150
MHz
UNR4211/4214/4215/421K
10
UNR4212/4217
22
UNR4213/421D/421E/4210
R
1
(–30%)
47
(+30%)
k
UNR4216/421F/421L
4.7
UNR4218
0.51
UNR4219
1
UNR4211/4212/4213/421L
0.8
1.0
1.2
UNR4214
0.17
0.21
0.25
UNR4218/4219
0.08
0.1
0.12
UNR421D
R
1
/R
2
3.7
4.7
5.7
UNR421E
1.7
2.14
2.6
UNR421F
0.37
0.47
0.57
UNR421K
1.7
2.13
2.6
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* h
FE
rank classification (UNR4215/4216/4217/4210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR4218 | Composite Device - Transistors with built-in Resistor |
| UN4218 | Composite Device - Transistors with built-in Resistor |
| UNR4219 | Composite Device - Transistors with built-in Resistor |
| UN4219 | Composite Device - Transistors with built-in Resistor |
| UNR421D | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN4218 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN4219 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN421D | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UN421E | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN421F | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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