參數(shù)資料
型號(hào): UN411F
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 3/15頁
文件大?。?/td> 376K
代理商: UN411F
3
UNR41XX Series
SJH00018CED
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
UNR4111/4112/4113/411L
R
1
/R
2
0.8
1.0
1.2
ratio
UNR4114
0.17
0.21
0.25
UNR4118/4119
0.08
0.1
0.12
UNR411D
3.7
4.7
5.7
UNR411E
1.7
2.14
2.6
UNR411F
0.37
0.47
0.57
UNR411H
0.17
0.22
0.27
UNR411M
0.047
UNR411N
0.1
Common characteristics chart
Characteristics charts of UNR4110
0
0
160
20
Ambient temperature T
a
(
°
C)
60
100
140
40
120
80
100
300
200
400
T
T
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
120
100
80
60
40
20
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3
mA
0.2
mA
0.1
mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
100
200
300
400
10
30
100
300
1
000
D
F
V
CE
=
–10 V
T
a
=
75
°
C
25
°
C
25
°
C
相關(guān)PDF資料
PDF描述
UNR411H Composite Device - Transistors with built-in Resistor
UN411H Composite Device - Transistors with built-in Resistor
UNR411L Composite Device - Transistors with built-in Resistor
UNR4110 Composite Device - Transistors with built-in Resistor
UN4110 Composite Device - Transistors with built-in Resistor
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