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參數(shù)資料
| 型號： | UN4119 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 376K |
| 代理商： | UN4119 |
3
UNR41XX Series
SJH00018CED
■
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
UNR4111/4112/4113/411L
R
1
/R
2
0.8
1.0
1.2
ratio
UNR4114
0.17
0.21
0.25
UNR4118/4119
0.08
0.1
0.12
UNR411D
3.7
4.7
5.7
UNR411E
1.7
2.14
2.6
UNR411F
0.37
0.47
0.57
UNR411H
0.17
0.22
0.27
UNR411M
0.047
UNR411N
0.1
Common characteristics chart
Characteristics charts of UNR4110
0
0
160
20
Ambient temperature T
a
(
°
C)
60
100
140
40
120
80
100
300
200
400
T
T
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
120
100
80
60
40
20
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3
mA
0.2
mA
0.1
mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
100
200
300
400
10
30
100
300
1
000
D
F
V
CE
=
–10 V
T
a
=
75
°
C
25
°
C
25
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| UNR411D | Composite Device - Transistors with built-in Resistor |
| UN411D | Composite Device - Transistors with built-in Resistor |
| UNR411E | Composite Device - Transistors with built-in Resistor |
| UN411E | Composite Device - Transistors with built-in Resistor |
| UNR411F | Composite Device - Transistors with built-in Resistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UN411D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN411E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN411F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN411H | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN411L | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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