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| 型號(hào)： | UN4116S |
| 英文描述： | 0.8A SCRS |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）| SPAK |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | UN4116S |
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2
Transistors with built-in Resistor
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
I
CBO
I
CEO
Conditions
min
typ
max
– 0.1
Unit
μ
A
μ
A
Collector cutoff current
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
– 0.5
UNR4111
– 0.5
UNR4112/4114/411E/411D
– 0.2
UNR4113
– 0.1
UNR4115/4116/4117/4110
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
mA
UNR411F/411H
–1.0
UNR4119
–1.5
UNR4118/411L
–2.0
Collector to base voltage
V
CBO
V
CEO
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
V
Collector to emitter voltage
–50
V
UNR4111
35
UNR4112/411E
60
UNR4113/4114
h
FE
V
CE
= –10V, I
C
= –5mA
80
UNR4115*/4116*/4117*/4110*
160
460
UNR411F/411D/4119/411H
30
UNR4118/411L
20
Collector to emitter saturation voltage
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CC
= –5V, V
B
= –3.5V, R
L
= 1k
V
CC
= –5V, V
B
= –10V, R
L
= 1k
V
CC
= 5V, V
B
= –6V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
– 0.25
V
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
UNR4113
V
OL
– 0.2
V
UNR411D
– 0.2
UNR411E
– 0.2
Transition frequency
f
T
80
MHz
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4113/4110/411D/411E
47
UNR4116/411F/411L
R
1
(–30%)
4.7
(+30%)
k
UNR4118
0.51
UNR4119
1
UNR411H
2.2
UNR4111/4112/4113/411L
0.8
1.0
1.2
UNR4114
0.17
0.21
0.25
UNR4118/4119
0.08
0.1
0.12
UNR411D
R
1
/R
2
3.7
4.7
5.7
UNR411E
1.7
2.14
2.6
UNR411F
0.37
0.47
0.57
UNR411H
0.17
0.22
0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* h
FE
rank classification (UNR4115/4116/4117/4110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
UNR4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
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| UN4117 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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