- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361572 > UN4116 Composite Device - Transistors with built-in Resistor PDF資料下載
參數(shù)資料
| 型號(hào)： | UN4116 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁(yè)數(shù)： | 2/15頁(yè) |
| 文件大?。?/td> | 376K |
| 代理商： | UN4116 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
2
UNR41XX Series
SJH00018CED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
0.5
0.2
μ
A
Emitter
cutoff
current
UNR4111
I
EBO
mA
UNR4112/4114/411D/
411E/411M/411N
UNR4113
0.1
0.01
1.0
1.5
2.0
UNR4110/4115/4116/4117
UNR411F/411H
UNR4119
UNR4118/411L
Collector to base voltage
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
V
Collector to emitter voltage
V
CEO
h
FE
V
DC
UNR4111
35
current
UNR4112/411E
60
gain
UNR4113/4114/411M
80
UNR4110
*
/41115
*
/4116
*
/
4117
*
160
460
UNR4118/411L
20
UNR4119/411D/411F/411H
30
UNR411N
80
400
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
High level output voltage high level
V
OH
4.9
V
Low level output voltage
V
OL
0.2
V
UNR4113
UNR411D
UNR411E
Transition frequency
f
T
80
MHz
Input
UNR4118
R
1
30%
0.51
+
30%
k
resistance UNR4119
1
UNR411H/411M
2.2
UNR4116/411F/411L/411N
4.7
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note)*: h
FE
rank classification (UNR4110/4115/4116/4117)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR4117 | Composite Device - Transistors with built-in Resistor |
| UN4117 | Composite Device - Transistors with built-in Resistor |
| UNR4118 | Composite Device - Transistors with built-in Resistor |
| UN4118 | Composite Device - Transistors with built-in Resistor |
| UNR4119 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN4116Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| UN4116R | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| UN4116S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
| UN4117 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UN4117Q | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SPAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。