參數(shù)資料
型號: UN2224
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 4/17頁
文件大?。?/td> 280K
代理商: UN2224
UNR22XX Series
4
SJH00010BED
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
3
0.4
10
30
100
300
1
000
3
000
10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
40
120
80
160
140
100
60
20
C
C
T
a
=
25
°
C
I
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
000.5 mA
0.0.9 mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25C
0
1
3
Collector current I
C
(mA)
100
200
300
400
10
30
100
300
1
000
F
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
3
0.4
10
30
100
300
1
000
3
000
10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
Characteristics charts of UNR2211
相關PDF資料
PDF描述
UNR2224 Composite Device - Transistors with built-in Resistor
UN2223 Composite Device - Transistors with built-in Resistor
UNR2223 Composite Device - Transistors with built-in Resistor
UN2222 Composite Device - Transistors with built-in Resistor
UNR2222 Composite Device - Transistors with built-in Resistor
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