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參數(shù)資料
| 型號(hào)： | UN212Y |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer transistor |
| 中文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | UN212Y |
6
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
C
ob
— V
CB
V
IN
— I
O
Characteristics charts of UN212Y
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
V
IN
— I
O
0
–1
24
20
16
12
8
4
–3
–10
–30
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
–0.01
–0.1 –0.3
–0.1
–1
–10
–0.03
–0.3
–3
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
0
–12
–2
–10
–4
–8
–6
–240
–200
–160
–120
–80
–40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.2mA
–0.2mA
–0.4mA
–0.6mA
–0.8mA
–1.0mA
–0.01
–0.03
–1
–3
–0.1
–0.3
–1
–3
–10
–30
–100
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
240
200
160
120
80
40
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
–1
24
20
16
12
8
4
–3
–10
–30
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
–0.01
–0.1 –0.3
–0.1
–1
–10
–0.03
–0.3
–3
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
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