參數(shù)資料
型號: UN211D
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁數(shù): 4/17頁
文件大小: 235K
代理商: UN211D
4
Transistors with built-in Resistor
Common characteristics chart
P
T
— Ta
Characteristics charts of UN2111
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
0
–12
–2
–10
–4
–8
–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
40
80
120
160
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
–1
–3
–10
–30
–100
C
o
f=1MHz
I
E
=0
Ta=25C
–1
–0.4
3
–10
–30
–100
–300
–1000
–3000
–10000
–1.4
–1.2
–1.0
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
T
T
相關(guān)PDF資料
PDF描述
UN211E Silicon PNP epitaxial planer transistor
UN211F Silicon PNP epitaxial planer transistor
UN211H Silicon PNP epitaxial planer transistor
UN211L Silicon PNP epitaxial planer transistor
UN211M Silicon PNP epitaxial planer transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UN211E 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
UN211F 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
UN211H 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN211L 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UN211M 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor