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參數(shù)資料
| 型號： | UN1518L-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 2500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 188K |
| 代理商： | UN1518L-AE3-R |
UN1518
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-088,A
2 of 3
ABS OLUT E MAX IMUM RAT INGS
(
Tc = 25°C unless otherwise stated)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
T
STG
RATINGS
20
20
5
6
2.5
500
625
-50 ~ +150
UNIT
V
V
V
A
A
mA
mW
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(Pulse) Note 2
Collector Current (DC)
Base Current
Total Device Dissipation
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test t
p
=300
μ
s.
δ
≤
2%
ELECT RICAL CHARACT ERIST ICS
PARAMETER
SYMBOL
BV
CBO
BV
CEO
* I
C
=10mA
BV
EBO
I
CBO
I
EBO
I
CES
TEST CONDITIONS
I
C
=100μA
MIN
20
20
5
TYP
100
27
8.3
10
70
130
0.89
0.79
400
450
360
180
140
23
170
400
MAX
100
100
100
15
150
200
1.0
1.0
30
UNIT
V
V
V
nA
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
I
E
=100μA
V
CB
=16V
V
EB
=4V
V
CES
=16V
I
C
=0.1A, I
B
=10mA
I
C
=1A, I
B
=10mA
I
C
=2.5A, I
B
=50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
*
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
BE(SAT)
* I
C
=2.5A, I
B
=50mA
V
BE(ON)
* I
C
=2.5A,V
CE
=2V
I
C
=10mA, V
CE
=2V
I
C
=200mA, V
CE
=2V
I
C
=2A, V
CE
=2V
I
C
=6A, V
CE
=2V
f
T
I
C
=50mA, V
CE
=10V f=100MHz
C
ob
V
CB
=10V, f=1MHz
t
(ON)
t
(OFF)
V
V
200
300
200
100
100
Static Forward Current Transfer Ratio
h
FE
*
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
* Pulse test conditions. t
p
=300
μ
s.
δ
≤
2%
MHz
pF
nS
nS
V
CC
=10V, I
C
=1A I
B1
=-I
B2
=10mA
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