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參數(shù)資料
| 型號： | UN1224 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL |
| 中文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | UN1224 |
1
Transistors with built-in Resistor
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Resistance by Part Number
(R
1
)
2.2k
4.7k
10k
2.2k
(R
2
)
2.2k
4.7k
10k
10k
G
UN1221
G
UN1222
G
UN1223
G
UN1224
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
50
V
Collector to emitter voltage
50
V
Collector current
500
mA
Total power dissipation
600
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
B
C
R1
R2
E
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
1
μ
A
μ
A
1
UN1221
5
UN1222
I
EBO
V
EB
= 6V, I
C
= 0
2
mA
UN1223/1224
1
Collector to base voltage
V
CBO
V
CEO
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
50
V
Collector to emitter voltage
Forward
current
transfer
ratio
50
V
UN1221
40
UN1222
h
FE
V
CE
= 10V, I
C
= 100mA
50
UN1223/1224
60
Collector to emitter saturation voltage
V
CE(sat)
V
OH
V
OL
f
T
I
C
= 100mA, I
B
= 5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 500
V
CC
= 5V, V
B
= 3.5V, R
L
= 500
V
CB
= 10V, I
E
= –50mA, f = 200MHz
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
V
Transition frequency
200
MHz
UN1221/1224
2.2
UN1222
R
1
(–30%)
4.7
(+30%)
k
UN1223
10
Resistance ratio
R
1
/R
2
0.8
1.0
1.2
UN1224
0.22
Emitter
cutoff
current
Input
resis-
tance
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