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參數(shù)資料
| 型號： | UN1066L-TN3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH SPEED SWITCHING TRANSISTOR |
| 中文描述： | 高速開關晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 189K |
| 代理商： | UN1066L-TN3-T |
UN1066
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-023,B
ABS OLUT E MAX IMUM RAT ING
(Ta=25
℃
)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
RATINGS
20
15
5
6
9
600
3.5
150
-55 ~ +150
UNIT
V
V
V
A
A
mA
W
℃
℃
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation(T
C
=25
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
)
℃
ELECT RICAL CHARACT ERIST ICS
(Ta=25
℃
)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
TEST CONDITIONS
I
C
=10
μ
A, I
E
=0
I
C
=1mA, R
BE
=
∞
I
E
=10
μ
A, I
C
=0
I
C
=1.5A, I
B
=30mA
I
C
=3A, I
B
=60mA
V
BE(SAT)
I
C
=1.5A, I
B
=30mA
I
CBO
V
CB
=12V, I
E
=0
I
EBO
V
EB
=4V, I
C
=0
h
FE
V
CE
=0.5V, I
C
=5A
f
T
V
CE
=2V, I
C
=500mA
C
ob
V
CB
=10V, f=1MHz
t
ON
Refer to Test Circuit
t
STG
Refer to Test Circuit
t
F
Refer to Test Circuit
MIN
20
15
6
250
100
TYP
MAX
180
300
1.2
0.1
0.1
50
50
250
25
UNIT
V
V
V
mV
mV
V
μA
μA
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
V
CE(SAT)
Base-to-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
MHz
pF
ns
ns
ns
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