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參數(shù)資料
| 型號： | UMX5101 |
| 廠商： | Microsemi Corporation |
| 英文描述： | ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| 中文描述： | 超低磁力矩PIN二極管的應(yīng)用磁共振成像 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 377K |
| 代理商： | UMX5101 |
Microsemi
Lowell Division
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Copyright
2006
Rev. A, 2006-12-28
UMX5101
ULTRA LOW MAGNETIC MOMENT PIN
DIODE FOR MRI APPLICATIONS
w
M
.
RoHS COMPLIANT
DESCRIPTION
The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in
bore surface coil applications associated with higher field strength (3T and greater) MR
scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available
in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla
.
The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8
(J/T)
.
The diodes are offered in a surface mount package. The SM package utilizes a square end cap
to mark the cathode. The anodeis round. The fullySOGO passivated PIN diode chip is full
face metallurgically bonded to high conductive pins for lower thermal and electrical
resistances.The PIN diodes feature low forward bias resistance and high zero bias impedance.
The UMX5101 PIN diodes are characterized at 64, 128, and 300 MHz. The UMX5101 meets
RoHS requirements per EU Directive 2002/95/EC.
ABSOLUTE MAXIMUM RATINGS AT 25o C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
100
100
V
RMS Reverse Voltage
Storage Temperature
V
R (RMS)
T stg
T op
75
V
oC
oC
-65 to +175
-65 to +150
Operating Temperature Non-Repetitive Peak
THERMAL CHARACTERISTICS AT 25o C
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
UMX5101SM
θ
20
oC/Watt
IMPORTANT
:
Forthemostcurrentdata,consult
MICROSEMI
’swebsite:
www.MICROSEMI.com
KEY FEATURES
Ultra low magnetic construction
SOGO passivated chip
Thermally matched configuration
RoHS compliant
1
Low capacitance at 0 V bias
Low conductance at 0 V bias
Metallurgical bond
Fused-in-glass construction
Non cavity design
Available in surface mount
package.
Compatible with automatic
insertion equipment
1-
These devices are supplied with
Silver terminations. Other terminal
finishes may be available on request.
Consult factory for details.
APPLICATIONS/BENEFITS
High B Field (3T+) in bore
APPLICATIONS:
Active or semi-active
(not passive)
MR blocking circuits
MR detuning circuits
MR disable circuits
MR receiver protector circuits
U
M
X
5
1
0
1
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UMX5101_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5101SM | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5601 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5601_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
| UMX5601SM | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS |
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