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參數(shù)資料
| 型號(hào)： | UMIL10 |
| 英文描述： | Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible |
| 中文描述： | 晶體管|晶體管|叩| 55V的五（巴西）總裁| 1.5AI（丙）|的SOT - 122A |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | UMIL10 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UMIL 10
100 Watts, 28 Volts, Class AB
Defcom 100 - 400
MHz
GENERAL DESCRIPTION
The UMIL10 is a COMMON EMITTER broadband transistor specifically
intended for use in the 100-400 MHz frequency band. It may be operated in
Class AB or C. Gold metallization and silicon diffused resistors ensure
ruggedness and high reliability.
CASE OUTLINE
55FT, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 28 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 1.5 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 400 MHz
Vcc = 28 Volts
10
10.0
60
1.0
30:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
Cob
h
FE
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 50 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 200 mA
4.0
55
30
10
11.5
6.3
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
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PDF描述 |
|---|---|
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| UNR2211(UN2211) | Composite Device - Transistors with built-in Resistor |
| UNR2226(UN2226) | UNR2226 (UN2226) - NPN Transistor with built-in Resistor |
| UNR2224(UN2224) | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UMIL10/UMIL-10 | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| UMIL100 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | SOT-160VAR |
| UMIL100A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 65V 20A 7-Pin Case 55JU-2 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANSISTOR BIPO 55JU-2 |
| UMIL10P | 制造商:GHZTECH 制造商全稱(chēng):GHZTECH 功能描述:10 Watts, 28 Volts, Class AB UHF Communications 100 - 400 MHz |
| UMIL20 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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