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參數(shù)資料
| 型號(hào)： | UMC5NT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual Common Base-Collector Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419A-02, SC-88A, SC-70, 5 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 87K |
| 代理商： | UMC5NT1 |
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 5
1
Publication Order Number:
UMC2NT1/D
UMC2NT1, UMC3NT1,
UMC5NT1
Preferred Devices
Dual Common
BaseCollector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
complementary BRT devices are housed in the SOT353 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
PbFree Packages are Available
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient
(surface mounted)
R
θ
JA
833
°
C/W
Operating and Storage Temperature Range
T
J
, T
stg
65 to
+150
°
C
Total Package Dissipation
@ T
A
= 25
°
C (Note 1)
P
D
*
150
mW
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
SC88A/SOT353
CASE 419A
STYLE 6
Ux = Device Marking
x
= 2, 3 or 5
d
= Date Code
Ux
MARKING
DIAGRAM
1
3
2
5
4
Preferred
devices are recommended choices for future use
and best overall value.
4
5
Q1
Q2
R1
R1
R2
R2
3
1
2
d
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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| UMC5NT1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V Dual NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMC5NT2 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| UMC5NT2G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V Dual NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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| UMC82C284 | 制造商:UMC 制造商全稱:UMC 功能描述:Clock Generator and Ready Interface |
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