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參數(shù)資料
| 型號： | ULQ2004D1 |
| 廠商： | 意法半導體 |
| 英文描述： | SEVEN DARLINGTON ARRAYS |
| 中文描述： | SEVEN公司達林頓陣列 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 300K |
| 代理商： | ULQ2004D1 |
ELECTRICAL CHARACTERISTICS
(T
J
= –40 to 105
o
C for DIP16 unless otherwise specified)
(T
J
= 25 to 105
o
C for SO16 unless otherwise specified)
Symbol
I
CEX
Parameter
Test Conditions
Min.
Typ.
Max.
50
100
Unit
μ
A
μ
A
Fig.
1a
1a
Output Leakage Current
V
CE
= 50V
T
J
= 105
°
C, V
CE
= 50V
T
= 105
°
C
for
ULQ2002A
for
ULQ2004A
I
C
= 100mA, I
B
= 250
μ
A
I
C
= 200mA, I
B
= 350
μ
A
I
C
= 350mA, I
B
= 500
μ
A
for
ULQ2002A
for
ULQ2003A
for
ULQ2004A
V
CE
= 50V, V
i
= 6V
V
CE
= 50V, V
i
= 1V
500
500
1.1
1.3
1.6
1.25
1.35
0.5
1.45
μ
A
μ
A
V
V
V
mA
mA
mA
mA
μ
A
V
V
V
V
V
V
V
V
–
pF
μ
s
μ
s
μ
A
μ
A
V
1b
1b
2
2
2
3
3
3
3
4
5
5
5
5
5
5
5
5
2
–
–
–
6
6
7
V
CE(sat)
Collector-emitter
Saturation Voltage
0.9
1.1
1.3
0.82
0.93
0.35
1
65
I
i(on)
Input Current
V
i
= 17V
V
i
= 3.85V
V
i
= 5V
V
i
= 12V
I
i(off)
V
i(on)
Input Current
Input Voltage
T
J
= 105
°
C, I
C
= 500
μ
A
for
ULQ2002A
for
ULQ2003A
50
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 250mA
V
CE
= 2V, I
C
= 300mA
V
CE
= 2V, I
C
= 125mA
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 275mA
V
CE
= 2V, I
C
= 350mA
V
CE
= 2V, I
C
= 350mA
for
ULQ2004A
13
2.4
2.7
3
5
6
7
8
h
FE
C
i
t
PLH
t
PHL
I
R
DC Forward Current Gain
Input Capacitance
Turn-on Delay Time
Turn-off Delay Time
Clamp Diode Leakage
Current
Clamp Diode Forward
Voltage
for
ULQ2001A
1000
15
0.25
0.25
25 (*)
1 (*)
1 (*)
50
100
2
0.5 V
i
to 0.5 V
o
0.5 V
i
to 0.5 V
o
V
R
= 50V
T
J
= 105
°
C, V
R
= 50V
I
F
= 350mA
V
F
1.7
(*) Guaranteed by design
ULQ2001A - ULQ2002A - ULQ2003A - ULQ2004A
3/7
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| ULQ2004D1013TR | 功能描述:達林頓晶體管 Seven NPN Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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