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參數(shù)資料
| 型號： | ULBM10 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.280 INCH, STUD PACKAGE-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 17K |
| 代理商： | ULBM10 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 20 mA
BV
CES
I
C
= 25 mA
BV
EBO
I
E
= 10 mA
I
CEO
V
CB
= 15 V
I
CES
V
CE
= 10 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
10
UNITS
V
V
V
mA
mA
---
2.0
3.0
---
C
ob
V
CB
= 12.5 V f = 1.0 MHz
25
pF
P
G
η
C
V
CC
= 12.5 V P
OUT
= 10 W f = 470 MHz
7.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
ULBM10
DESCRIPTION:
The
ASI ULBM10
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
2.5 A
V
CBO
36 V
V
CEO
16 V
V
CES
36 V
V
EBO
4.0 V
P
DISS
58 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
7.0
O
C/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10682
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.285 / 7.24
.007 / 0.18
.137 / 3.48
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.285 / 7.24
.220 / 5.59
K
.175 / 4.45
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
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