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參數(shù)資料
| 型號： | UL631H256SC55 |
| 元件分類： | DRAM |
| 英文描述： | 128 Kbit serial SPI bus EEPROM with high speed clock |
| 中文描述： | NVRAM中（EEPROM的基礎） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 126K |
| 代理商： | UL631H256SC55 |
1
November 01, 2001
UL631H256
Low Voltage
SoftStore
32K x 8 nvSRAM
The UL631H256 has two separate
modes of operation: SRAM mode
and nonvolatile mode
.
In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The UL631H256 is a fast static
RAM (45 and 55 ns), with a nonvo-
latile electrically erasable PROM
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation), or from the
EEPROM to the SRAM (the
RECALL operation) are initiated
through software sequences.
The UL631H256 combines the
high performance and ease of use
of a fast SRAM with nonvolatile
data integrity.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
The UL631H256 is pin compatible
with standard SRAMs.
High-performance CMOS non-
volatile static RAM 32768 x 8 bits
45 and 55 ns Access Times
20 and 25 ns Output Enable
Access Times
Software STORE Initiation
Automatic STORE Timing
10
5
STORE cycles to EEPROM
10 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from
EEPROM
Unlimited Read and Write to
SRAM
Wide voltage range: 2.7 ... 3.6 V
Operating temperature range:
0 to 70 °C
-40 to 85 °C
CECC 90000 Quality Standard
ESD protectio > 2000 V
(MIL STD 883C M3015.7-HBM)
Packages:SOP28 (330 mil)
TSOP32 (Type I)
Pin Configuration
Pin Description
Signal Name
Signal Description
A0 - A14
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
E
G
W
VCC
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VCC
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SOP
Top View
28
27
26
25
24
23
22
21
20
19
18
17
16
15
G
A11
A9
A8
A13
W
n. c.
VCC
n. c.
A14
A12
A7
A6
A5
A4
A3
n.c.
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
n.c.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP
Top View
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Features
Description
相關PDF資料 |
PDF描述 |
|---|---|
| UL631H256SK55 | 128 Kbit serial SPI bus EEPROM with high speed clock |
| UL634H256SC55 | 128 Kbit serial SPI bus EEPROM with high speed clock |
| UL634H256SK55 | 256 Kbit serial SPI bus EEPROM with high-speed clock |
| UL634H256SC35 | LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM |
| UL634H256SC35G1 | LOW VOLTAGE POWERSTORE 32K X 8 NVSRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UL631H256SK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256SK35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256SK45 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256SK45G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256SK55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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