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參數(shù)資料
| 型號： | UL631H256S2C35G1 |
| 英文描述： | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| 中文描述： | SimtekLow電壓SoftStore 32K的× 8非易失 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 190K |
| 代理商： | UL631H256S2C35G1 |
UL631H256
8
March 31, 2006
STK Control #ML0057
Rev 1.0
n:
o:
p:
q:
The software sequence is clocked with E controlled READs
Once the software controlled STORE or RECALL cycle is initiated, it completes automatically, ignoring all inputs.
Note that STORE cycles (but not RECALL) are aborted by V
CC
< V
SWITCH
(STORE inhibit).
An automatic RECALL also takes place at power up, starting when V
CC
exceeds V
SWITCH
and takes t
RESTORE
. V
CC
must not drop below
V
SWITCH
once it has been exceeded for the RECALL to function properly.
Noise on the E pin may trigger multiple READ cycles from the same address and abort the address sequence.
If the Chip Enable Pulse Width is less than t
a(E)
(see Read Cycle) but greater than or equal t
w(E)SR
, than the data may not be valid at
the end of the low pulse, however the STORE or RECALL will still be initiated.
r:
s:
No. Software Controlled STORE/RECALL
Cycle
l, n
Symbol
35
45
Unit
Alt.
IEC
Min.
Max.
Min.
Max.
25 STORE/RECALL Initiation Time
t
AVAV
t
cR
35
45
ns
26 Chip Enable to Output Inactive
o
t
ELQZ
t
dis(E)SR
600
600
ns
27 STORE Cycle Time
p
t
ELQXS
t
d(E)S
10
10
ms
28 RECALL Cycle Time
q
t
ELQXR
t
d(E)R
20
20
ms
29 Address Setup to Chip Enable
r
t
AVELN
t
su(A)SR
0
0
ns
30 Chip Enable Pulse Width
r, s
t
ELEHN
t
w(E)SR
25
30
ns
31 Chip Disable to Address Change
r
t
EHAXN
t
h(A)SR
0
0
ns
Software Controlled STORE/RECALL Cycle
t, u
(E = HIGH after STORE initiation)
Software Controlled STORE/RECALL Cycle
r, s, t, u
(E = LOW after STORE initiation)
Ai
E
DQi
Output
t
cR
t
su(A)SR
t
w(E)SR
(30)
High Impedance
ADDRESS 1
VALID
VALID
ADDRESS 6
t
cR
t
d(E)S
t
dis(E)SR
(26)
(25)
(25)
(31)
(29)
(27)
(28)
t
h(A)SR
Ai
E
DQi
Output
t
cR
t
w(E)SR
(30)
High Impedance
ADDRESS 1
VALID
VALID
ADDRESS 6
t
d(E)S
(27)
(28)
(25)
t
h(A)SR
(31)
t
su(A)SR
(29)
t
dis(E)SR
(26)
t
h(A)SR
(31)
t
su(A)SR
(29)
t
d(E)R
t
d(E)R
t:
W must be HIGH when E is LOW during the address sequence in order to initiate a nonvolatile cycle. G may be either HIGH or LOW
throughout. Addresses 1 through 6 are found in the mode selection table. Address 6 determines wheter the UL631H256 performs a
STORE or RECALL.
E must be used to clock in the address sequence for the Software controlled STORE and RECALL cycles.
u:
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| UL631H256S2C45 | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35 | SimtekLow Voltage SoftStore 32K x 8 nvSRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UL631H256S2C45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2C45G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K35G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
| UL631H256S2K45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage SoftStore 32K x 8 nvSRAM |
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