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參數(shù)資料
| 型號(hào)： | UK2996-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 600V SILICON N-CHANNEL POWER MOSFET |
| 中文描述： | 600V的硅N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 137K |
| 代理商： | UK2996-TA3-T |
UK2996
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-063 ,A
2 of 6
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
V
DSS
I
D
I
DM
V
DGR
V
GSS
I
AR
E
AS
E
AR
P
D
T
J
T
STG
RATINGS
600
10
30
600
±30
10
252
4.5
45
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
V
V
A
mJ
mJ
W
Drain to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Drain to Gate Voltage (R
GS
= 20 k
)
Gate to Source Voltage
Avalanche Current
Single Pulsed Avalanche energy (Note 2)
Repetitive Avalanche Energy (Note 3)
Total Power Dissipation (Tc = 25
Operating Temperature Range
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L = 4.41 mH, I
AR
= 10 A, V
DD
= 90 V, R
G
= 25
, starting T
J
= 25°C.
3. Pulse width and frequency is limited by T
J
.
THERMAL DATA
)
CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
2.78
UNIT
/ W
/ W
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
PARAMETER
SYMBOL
BV
GSS
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS (ON)
V
GS
= 10V, I
D
= 5A
g
FS
V
DS
= 10V, I
D
= 5A
C
ISS
C
RSS
C
OSS
Q
G
Q
GS
Q
GD
t
ON
t
R
t
OFF
TEST CONDITIONS
MIN TYP MAX UNIT
±30
600
2.0
0.74 1. 0
3.4
6.8
1500
Gate
Source Breakdown Voltage
Drain
Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current
Drain Source Leakage Current
Static Drain
Source ON Resistance
Forward Transconductance
Input Capacitance
V
DS
= 0V, I
G
= ±10μA
V
GS
= 0V, I
D
= 10mA
V
DS
= 10V, I
D
= 1mA
V
GS
= ±25V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
V
V
V
μA
μA
S
4.0
±10
100
Reverse Transfer Capacitance
13
Output Capacitance
V
DS
= 20V, V
GS
= 0V, f = 1MHz
140
pF
Total Gate Charge
38
Gate
Source Charge
21
Gate
Drain Charge
I
D
= 10A, V
DD
≈
400V, V
GS
= 10V
17
55
15
145
nC
Turn-on Delay Time
Turn-on Rise Time
Turn
off Delay Time
Switching
Time
Turn-off Fall Time
t
F
10V
0V
V
GS
I
D
=5A
V
OUT
t
P
=10
s, Duty
≤
1%
V
DD
≈
300V
50
R
L
=60
27
ns
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