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參數(shù)資料
| 型號： | UHBS60-1 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:9.0A,Vcbo: 50 V,Vceo: 26 V,Vces: 50V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:9.0A,Vcbo: 50 V,Vceo: 26 V,Vces: 50V,Vebo: 4.0 V)) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | UHBS60-1 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 50 mA
BV
CEO
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 20 V
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
50
26
3.0
20
UNITS
V
V
V
V
mA
mA
---
10
5
100
C
ob
V
CB
= 24 V
f = 1.0 MHz
75
pF
P
G
η
C
V
CE
= 24 V P
OUT
= 60 W f = 900 GHz
7.5
55
dB
%
NPN SILICON RF POWER TRANSISTOR
UHBS60-1
DESCRIPTION:
The
ASI UHBS60-1
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
9.0 A
V
CBO
50 V
V
CEO
26 V
V
CES
50 V
V
EBO
4.0 V
P
DISS
190 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.9
O
C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10672
MINIMUM
inches / mm
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.085 / 2.16
.110 / 2.79
.730 / 18.54
.235 / 5.97
.125 / 3.18
H
I
.355 / 9.02
.004 / 0.10
DIM
K
L
J
.120 / 3.05
.230 / 5.84
.006 / 0.15
.130 / 3.30
.260 / 6.60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G
F
J
C
A
B
2X.130
L
.160 / 4.06
.180 / 4.57
.980 / 24.89
.970 / 24.64
.355 / 9.02
.365 / 9.27
.365 / 9.27
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