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參數(shù)資料
| 型號(hào)： | UGF27025F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | 25瓦，2.7千兆赫，28V的寬帶RF功率N溝道增強(qiáng)型MOSFET的側(cè)向 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 315K |
| 代理商： | UGF27025F |
Page 1 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
High gain, high efficiency and high linearity
Integrated ESD Protection.
Maximum gain and insertion phase flatness.
Output load VSWR tolerance 10:1 all phase angles at
28V
DC
, 2500MHz, 25W (CW) output power.
Common source.
Application Specific Performance, 2.7 GHz
Typical 2-Tone Performance
Average Load Power – 12.5 W
η
D
– 30%
Power Gain – 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
VDD – 28V
IDQ – 330mA
Typical CW Performance
Average Load Power – 25 W
η
D
– 38%
Power Gain – 11.0 dB
VDD – 28V
IDQ – 330mA
Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a
minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
25W, 2.7 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
ALL GOLD metal system for highest reliability
Industry standard package
Internally matched for repeatable manufacturing
Package Type 440159
PN: UGF27025F
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