參數(shù)資料
型號(hào): UGDT125075
廠商: HIREL SYSTEMS LTD
元件分類: 脈沖/數(shù)據(jù)通信變壓器
英文描述: PULSE TRANSFORMER FOR MOSFET GATE DRIVE APPLICATION(S)
文件頁數(shù): 1/2頁
文件大小: 415K
代理商: UGDT125075
Date code 0229
Micro Gate Drive Transformers
Deliver MOSFET / IGBT gate power
and timing signals simultaneously
Directly drive high-side MOSFETs /
IGBTs on busses up to 200V
Excellent risetime, overshoot, and
peak current characteristics
Useful
Transfer
Drive
Magnetizing
Leakage
DC Resistance2
Interwinding Capacitance
Freq. Range
Ratio1
Excitation Inductance 2,3 Inductance 4
Drive
Gates
Drive-Gate
Gate-Gate
HiRel P/N
(KHz)
(+/-1%)
(VmS MAX)
(mH MIN)
(nH MAX)
(W MAX)
(pF MAX)
UGDT 125 050
125 ~ 500
1 : 0.5 : 0.5
63
330
500
2.0
0.7
60
30
UGDT 125 075
125 ~ 500
1 : 0.75 : 0.75
66
360
500
2.0
60
30
UGDT 125 100
125 ~ 500
1 : 1 : 1
63
330
500
2.0
160
Parameter
Conditions
Limit(s)
Units
Drive-gate; 1 min
1500
VDC
Dielectric Withstand Voltage
Gate-gate; 1 min
500
VDC
Winding Current
Any winding
100
mARMS
Total Power Dissipation5
300
mW
Operating Temperature
Continuous
-40 ~ +105
C
Storage Temperature
Continuous
-40 ~ +130
C
1. Drive : Gate or Drive : Gate : Gate.
2. TA = 25°C.
3. Small-signal measurement across the Drive winding with both Gates open.
4. Small-signal measurement across the Drive winding with both Gates shorted.
5. Derate at 5mW / C above 25C.
Units are inches [mm].
Tolerance on all dimensions is +/-0.010 [0.25] unless otherwise specified.
Specifications are subject to change without notice.
Model Selection Table
Absolute Maximum Ratings (All Models)
DRIVE
GATES
1
6
4
3
5
2
0.260 MAX
0.315 MAX
[6.60]
[8.00]
0.210 MAX
[5.33]
0.073 [1.85]
TYP (4 PLACES)
0.330 [8.38]
0.050 [1.27] TYP
(6 PLACES)
0.073 [1.85] TYP
(4 PLACES)
0.050 [1.27] TYP
(6 PLACES)
SUGGESTED PAD LAYOUT
1
2
3
4
5
6
www.hirelsystems.com
sales@hirelsystems.com
engineering@hirelsystems.com
Hi-Rel Systems, Inc.
11100 Wayzata Boulevard
Suite 501
Minnetonka, MN 55305
Phone: 952-544-1344
Fax: 952-544-1345
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