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參數(shù)資料
| 型號： | UF840-TF3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET |
| 中文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | UF840-TF3-T |
UF840
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-047,C
TYPICAL CHARACTERISTICS(Cont.)
D
D
,
Gate to Source Voltage, V
SD
(V)
2
8
10
Figure 13. Transfer Characteristics
0.01
0
0.1
1
10
100
6
4
T
J
= 25
T
J
= 150
Pulse Duration=80
Duty Cycle = 0.5% Max
V
DS
50V
s
D
D
)
Case Temperature, T
C
(
)
8
32
40
Figure 14. Drainto Sourceon Resistance vs.
Voltageand Drain Current
0
0
2
24
V
GS
=10V
V
GS
=20V
16
4
6
8
10
Pulse Duration=80
Duty Cycle = 0.5% Max
s
N
R
Junction Temperature, T
J
(
)
0
80
Figure 15. Normalized Drain to Sourceon
Resistance vs. Junction Temperature
0
120
-40
0.6
1.2
1.8
2.4
3.0
40
140
100
60
20
-20
-60
160
Pulse Duration=80
Duty Cycle = 0.5% Max
V
GS
=10V, I
D
=4.4A
s
N
V
Junction Temperature, T
J
(
)
0
80
Figure 16. Normalized Drainto Source Breakdown Voltage
vs. Junction Temperature
0.75
-60
1.25
40
0.85
0.95
1.05
1.15
100
60
20
-40
I
D
=250
A
-20
120 140160
Figure 17. Capacitance vs. Drainto Source Voltage
C
Drainto Source Voltage, V
DS
(V)
01
600
1200
3000
10
2
2400
1800
2
10
5
2
5
C
ISS
C
OSS
C
RSS
V
GS
=0V,
f=1MHz
C
ISS
=C
GS
+C
GD
C
RSS
=C
GD
C
OSS
C
DS
+C
GD
T
F
Drain Current, I
D
(A)
6
9
15
Figure 18. Transconductancevs. Drain Current
0
12
3
0
3
6
9
12
15
T
J
= 25
T
J
= 150
Pulse Duration=80
Duty Cycle = 0.5% Max
V
DS
50V
s
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