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參數(shù)資料
| 型號： | UF840-TA3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 8A, 500V, 0.85ohm, N-CHANNEL POWER MOSFET |
| 中文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 182K |
| 代理商： | UF840-TA3-T |
UF840
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-047,C
TYPICAL CHARACTERISTICS
0
P
Case Temperature, T
C
(
)
50
100
150
1.2
Figure 7. Normalized Power Dissipation vs. Case
Temperature
1.0
0.6
0.2
0
0.4
0.8
D
D
(
Case Temperature, T
C
(
)
75
100
150
Figure 8. Maximum ContionuousDrain Current
vs. Case Temperature
0
125
50
25
2
4
6
8
10
100
10
0.1
Drainto Source Voltage, V
DS
(V)
D
D
Figure 10. Forward Bias Safe Operating Area
10
2
10
1
1
10
3
10ms
100
s
1ms
10
s
T
C
=25
T
J
=Max Rated
Single Pulse
Operation in This Region is
Limited by r
DS (on)
10
-3
Rectangular Pulse Duration, t
1
(s)
N
I
J
Figure 9. Normalized Maximum Transient
Thermal Impedance
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
-1
1
0.05
0.02
0.01
10
-2
Notes:
Duty Factor: D=t1/t2
Peak T
J
=P
DM
×Z
JC
×R
JC
+T
C
0.5
0.2
0.1
Single
pulse
P
DM
t1
t2
DC
D
D
(
Drain to Source Voltage, V
DS
(V)
100
250
Figure 11. Output Characteristics
0
200
50
0
3
9
12
15
V
GS
=10V
V
GS
=5.5V
V
GS
=4.0V
V
GS
=4.5V
V
GS
=6.0V
Pulse Duration=80
Duty Cycle = 0.5% Max
s
150
6
V
GS
=5.0V
D
D
(
Drainto Source Voltage, V
DS
(V)
6
9
15
Figure 12. Saturation Characteristics
0
12
3
0
3
6
9
12
15
V
GS
=5.5V
V
GS
=6.0V
V
GS
=4.5V
V
GS
=4.0V
Pulse Duration=80
Duty Cycle = 0.5% Max
s
V
GS
=10V
V
GS
=5.0V
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