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參數(shù)資料
| 型號： | UF800-UF808 |
| 英文描述： | SMALL SIGNAL SCHOTTKY DIODE |
| 中文描述： | （38.10十一） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | UF800-UF808 |
UF800F – UF808F
1 of 2 2000 Won-Top Electronics
UF800F – UF808F
8.0A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction B
!
Ultra-Fast Switching
!
High Current Capability C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2
D
Mechanical Data
F
E
!
Case: ITO-220A Full Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-202, Method 208
!
Polarity: See Diagram I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1 +
J
PIN 2 -
K
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
UF800F UF801F UF802F UF803F UF804F UF806F UF808F Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
300
400
600
800
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
210
280
420
560
V
Average Rectified Output Current @T
C
= 100°C
I
O
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
125
A
Forward Voltage @I
F
= 8.0A
V
FM
1.0
1.3
1.7
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
RM
10
500
μA
Reverse Recovery Time (Note 1)
t
rr
50
100
nS
Typical Junction Capacitance (Note 2)
C
j
80
50
pF
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
ITO-220A
Min
14.9
—
2.62
3.56
13.46
0.68
3.74
5.84
4.44
2.54
0.35
1.14
4.95
Dim
A
B
C
D
E
F
G
H
I
J
K
L
P
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91
6.86
4.70
2.79
0.64
1.40
5.20
All Dimensions in mm
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