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參數(shù)資料
| 型號： | UF630 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
| 中文描述： | 9A條，為200V，0.4з的N通道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 176K |
| 代理商： | UF630 |
UF630
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-049,B
ABSOLUTE MAXIMUM RATINGS
(Tc = 25
, Unless Otherwise Specified)
PARAMETER
SYMBOL
V
DS
V
DGR
V
GS
RATINGS
200
200
±20
9
6
36
75
0.6
UNIT
V
V
V
A
A
A
W
W/
Drain to Source Voltage (T
J
=25
Drain to Gate Voltage (R
GS
= 20k
, T
J
=25
Gate to Source Voltage
~125
)
~125
)
Continuous
Ta = 100
Pulsed
I
D
Drain Current
I
DM
Maximum Power Dissipation (Ta = 25
Derating above 25
Single Pulse Avalanche Energy Rating
(V
DD
=20V, starting T
J
=25
Operation and Storage Temperature
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL SPECIFICATIONS
(T
C
=25
P
D
, L=3.37mH, R
G
=50
, peak I
AS
= 9A)
E
AS
150
mJ
T
J
, T
STG
-40 ~ +150
, unless otherwise specified.)
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
D(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
200
2
9
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
I
D
= 250μA, V
GS
= 0V (Figure 16)
V
GS
= V
DS
, I
D
= 250μA
V
DS
> I
D(ON)
x R
DS(ON)MAX
, V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
=0.8xRated BV
DSS
,V
GS
=0V,T
J
= 125
V
GS
= ±20V
V
V
A
μA
μA
nA
4
25
250
±100
Zero Gate Voltage Drain Current
I
DSS
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
I
GSS
R
DS(ON)
I
D
= 5A, V
GS
= 10V (Figure 14, 15)
0.25 0.85
Forward Transconductance (Note 1)
g
FS
V
DS
> I
D(ON)
x R
DS(ON)MAX
, I
D
= 5A
(Figure 18)
3
4.8
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
NOTE : 1. Pulse Test: Pulse width
≤
300μs, Duty Cycle
≤
2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
t
DLY(ON)
t
R
t
DLY(OFF)
t
F
Q
G(TOT)
Q
GS
Q
GD
C
ISS
C
OSS
C
RSS
30
50
50
40
30
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
V
DD
= 90V, I
D
≈
9A, R
GS
= 9.1
, V
GS
= 10V
R
L
= 9.6
(Note 2)
19
10
9
600
250
80
V
GS
= 10V, I
D
= 9A,
V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 20) (Note 3)
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
(Figure 17)
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| UF630L-TA3-T | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
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| UF630-TA3-T | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UF630_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:200V, 9A N-CHANNEL POWER MOSFET |
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| UF630G-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:200V, 9A N-CHANNEL POWER MOSFET |
| UF630G-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:200V, 9A N-CHANNEL POWER MOSFET |
| UF630G-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:200V, 9A N-CHANNEL POWER MOSFET |
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