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參數(shù)資料
| 型號(hào)： | UF630-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
| 中文描述： | 9A條，為200V，0.4з的N通道功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 176K |
| 代理商： | UF630-TA3-T |
UF630
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-049,B
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
Remark:
Modified MOSFET symbol showing the internal devices inductances as below.
L
D
3.5
4.5
nH
nH
L
S
7.5
nH
G
S
D
L
D
L
S
THERMAL DATA
PARAMETER
SYMBOL
JA
RATINGS
80
1.67
UNIT
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SOURCE TO DRAIN DIODE SPECIFICATIONS
Jc
/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source to Drain Diode Voltage
(Note 1)
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
Reverse Recovery Charge
NOTE : 1. Pulse Test: Pulse width
≤
300μs, Duty Cycle
≤
2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
V
SD
T
J
= 25
, I
SD
= 9.0A, V
GS
=0V (Figure 19)
2
V
I
SD
I
SDM
t
RR
Q
RR
8
36
A
A
ns
μC
Note 2
T
J
= 150
T
J
= 150
, I
SD
= 9.0A, dI
SD
/dt = 100A/μs
, I
SD
= 9.0A, dI
SD
/dt = 100A/μs
450
3
G
S
D
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| UF630-TF3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS |
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| UF634L-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:ADVANCED POWER MOSFETADVANCED POWER MOSFET |
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