參數(shù)資料
型號: UF4007-1200
廠商: SEMIKRON INTERNATIONAL
元件分類: 參考電壓二極管
英文描述: Ultrafast silicon rectifier diode
中文描述: 1 A, 1200 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: PLASTIC, DO-41, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 38K
代理商: UF4007-1200
U
UF4001-UF4007, Rev. A
UF4001 - UF4007
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
1999 Fairchild Semiconductor Corporation
Features
Low forward voltage drop.
High surge current capability.
High reliability.
High current capability.
Parameter
Device
Units
4001
50
35
50
4002
100
70
100
4003
200
140
200
4004
400
280
400
4005
600
420
600
4006
800
560
800
4007
1000
700
1000
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
V
V
V
DC Reverse Voltage
Maximum Reverse Current
@ rated V
R
(Rated V
R
)
T
A
= 25
°
C
T
A
= 100
°
C
10
50
μ
A
μ
A
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
50
75
nS
1.0
1.7
V
17
pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
.375 " lead length @ T
A
= 75
°
C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
1.0
A
i
f(surge)
30
A
P
D
2.08
17
60
15
W
mW/
°
C
°
C/W
°
C/W
°
C
°
C
R
θ
JA
R
θ
JL
T
stg
T
J
-65 to +150
-65 to +150
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)
Discrete POWE R & Signal
Technologies
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