參數(shù)資料
型號(hào): UF28150J
英文描述: CABLE ID MARKERS
中文描述: 功率MOSFET晶體管150瓦,100 - 500兆赫,28 V的
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 171K
代理商: UF28150J
UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
N-Channel Enhancement Mode Device
Applications
150 Watts CW
Common Source Gemini Configuration
RESFET Structure
Internal Input Impedance Matching
Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
20
Drain-Source Current
IDS
28
Dissipation @25°C
PD
233
Storage Temperature
Tstg
-55 to +150
Units
V
V
A
W
°C
Junction Temperature
Tj
θ
jc
200
°C
Thermal Resistance
0.75
°C/W
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter
Symbol
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Gate Threshold Voltage
VGS(th)
Forward Transconductance
Gm
Input Capacitance
CISS
Reverse Capacitance
CRSS
Output Capacitance
COSS
Power Gain
GP
Collector Efficiency
Min
60
Max
-
Units
V
Test Conditions
BVDSS
ID=40 mA, VGS=0.0 V*
IDSS
-
4.0
mA
VDS=28.0 V, VGS=0.0 V*
IGSS
-
2.0
μ
A
VGS=20 V, VDS=0.0 V*
2.0
1.0
10
50
6.0
-
200
50
14
-
-
V
S
pF
pF
pF
dB
%
VDS=10.0 V, IDS=200 mA*
VDS=10.0 V, IDS=2000 mA (pulsed)*
VDS=28.0 V, f=1.0 MHz (Reference Only)*
VDS=28.0 V, f=1.0 MHz*
VDS=28.0 V, f=1.0 MHz*
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
η
Load Mismatch Tolerance
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
Z in (
935
4.6 + j8.0
960
4.7 + j7.8
M/A-COM POWER TRANSISTORS
1742 CRENSHAW BLVD
TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
VSWR
-
3.0:1
-
)
Z load (
2.3 + j3.1
2.4 + j3.1
)
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
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相關(guān)代理商/技術(shù)參數(shù)
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