參數(shù)資料
型號(hào): UDN5713M
廠商: Allegro MicroSystems, Inc.
英文描述: DUAL PERIPHERAL AND POWER DRIVER TRANSIENT PROTECTED OUTPUTS
中文描述: 雙周邊和功率驅(qū)動(dòng)器輸出瞬態(tài)保護(hù)
文件頁數(shù): 1/4頁
文件大?。?/td> 88K
代理商: UDN5713M
5713
DUAL PERIPHERAL AND POWER DRIVER
DSCONTNUEDPRODUCT
Each Driver . . . . . . . . . . . . . . . . .
0.8 W
Operating Free-Air Temperature Range,
T
A
. . . . . . . . . . . . . . . . .
-20
°
C to +85
°
C
Storage Temperature Range,
T
S
. . . . . . . . . . . . . . . .
-55
°
C to +150
°
C
—FORREFERENCEONLY
monolithic integrated circuit incorporating NOR logic gates, high-
current switching transistors, and transient suppression diodes on the
same chip. The two output transistors are capable of simultaneously
sinking 300 mA continuously at ambient temperatures of up to +70
°
C.
In the OFF state, this driver will withstand at least 80 V.
The UDN5713M dual driver is ideally suited for interface between
low-level or high-level logic and high-current/high-voltage loads.
Typical applications include driving peripheral loads such as incandes-
cent lamps, light-emitting diodes, memories, and heaters with a load
current of up to 600 mA.
The integral transient suppression diodes allow the use of these
drivers with inductive loads such as relays, solenoids, or stepping
motors without the need for discrete diodes. Similar devices with four
drivers per package are the 5703 and 5706.
FEATURES
I
DTL/TTL/PMOS/CMOS Compatible Inputs
I
Low Input Current
I
300 mA Continuous Output Current
I
Stand-off Voltage of 80 V
Dwg. No. A-9789
DUAL PERIPHERAL AND POWER DRIVER
— TRANSIENT PROTECTED OUTPUTS
5713
Always order by complete part number, e.g.,
UDN5713M
.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
CC
. . . . . . . . . . . . . .
7.0 V
Input Voltage, V
IN
. . . . . . . . . . . . . . . . .
30 V
Output Off-State Voltage,
V
OFF
. . . . . . . . . . . . . . . . . . . . . . . .
80 V
Output On-State Sink Current,
I
. . . . . . . . . . . . . . . . . . . . . .
600 mA
Suppression Diode Off-State Voltage,
V
OFF
. . . . . . . . . . . . . . . . . . . . . . . .
80 V
Suppression Diode On-State Current,
I
. . . . . . . . . . . . . . . . . . . . . .
600 mA
Power Dissipation at T
A
= 25
°
C, P
*Derate at the rate of 12.5 mW/
°
C above
T
A
= 25
°
C.
D
2
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