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參數(shù)資料
| 型號： | UC2625QTR |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Brushless DC Motor Controller |
| 中文描述： | 無刷直流電機控制器 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 313K |
| 代理商： | UC2625QTR |
11
UC1625
UC2625
UC3625
For drives where speed is critical, P-Channel MOSFETs
can be driven by emitter followers as shown in Fig. 8.
Here, both the level shift NPN and the PNP must with-
stand high voltages. A zener diode is used to limit
gate-source voltage on the MOSFET. A series gate re-
sistor is not necessary, but always advisable to control
overshoot and ringing.
High-voltage optocouplers can quickly drive high-voltage
MOSFETs if a boost supply of at least 10 volts greater
than the motor supply is provided (See Fig. 9.) To protect
the MOSFET, the boost supply should not be higher than
18 volts above the motor supply.
For under 200V 2-quadrent applications, a power NPN
driven by a small P-Channel MOSFET will perform well
as a high-side driver as in Fig. 10. A high voltage
small-signal NPN is used as a level shift and a high volt-
age low-current MOSFET provides drive. Although the
NPN will not saturate if used within its limitations, the
base-emitter resistor on the NPN is still the speed limiting
component.
Fig. 11 shows a power NPN Darlington drive technique
using a clamp to prevent deep saturation. By limiting sat-
uration of the power device, excessive base drive is mini-
mized and turn-off time is kept fairly short. Lack of base
series resistance also adds to the speed of this ap-
proach.
Figure 9. Optocoupled N-channel high-side driver.
Figure 8. Fast high-side P-channel driver.
APPLICATION INFORMATION (cont.)
Figure 11. Power NPN low-side driver.
Figure 10. Power NPN high-side driver.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| UC2625QTR/70040 | 制造商:Texas Instruments 功能描述: |
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