參數(shù)資料
型號: UBV45
廠商: 友順科技股份有限公司
英文描述: HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS
中文描述: 高壓快速開關(guān)NPN電源中的應用
文件頁數(shù): 2/4頁
文件大?。?/td> 57K
代理商: UBV45
UBV45
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R201-081,c
2 of 4
ABS OLUT E MAX IMUM RAT INGS
(Ta = 25
PARAMETER
Collector Emitter Voltage (V
BE
= 0)
Collector Emitter Voltage (I
B
= 0)
Emitter Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at Ta = 25
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
T
STG
RATINGS
700
400
9
0.75
1.5
0.4
0.75
0.95
+150
-40 ~ +150
UNIT
V
V
V
A
A
A
A
W
T HERAMAL DAT A
PARAMETER
SYMBOL
RATINGS
130
UNIT
/W
Thermal Resistance Junction-ambient
JA
ELECT RICAL CHARACT ERIS T ICS
(Ta= 25
PARAMETER
Collector Emitter Sustaining Voltage (I
B
= 0)
, unless otherwise specified)
TEST CONDITIONS
V
CEO(SUS)*
I
C
= 1 mA
I
C
= 0.2 A , I
B
= 40 mA
I
C
= 0.3 A , I
B
= 75 mA
V
CE(SAT)*
I
C
= 0.4 A , I
B
= 135 mA
I
C
= 0.2 A , I
B
= 40 mA
V
BE(SAT)*
I
C
= 0.3 A , I
B
= 75 mA
I
EBO
V
EB
= 9 V
I
CEV
V
CE
= 700 V
I
C
= 0.2 A, V
CE
= 5 V
h
FE*
I
C
= 0.4 A, V
CE
= 5 V
I
C
= 0.2 A , V
CLAMP
= 300 V
I
B1
= -I
B2
= 40 mA , L = 3 mH
SYMBOL
MIN TYP MAX UNIT
400
0.2
0.3
0.4
12
7
V
0.5
1
1.5
1
1.2
1
250
27
20
Collector Emitter Saturation Voltage
V
Base Emitter Saturation Voltage
V
Emitter Cut off Current (I
C
= 0)
Collector Cut off Current (V
BE
= -1.5V)
mA
μ A
DC Current Gain
Inductive Load Fall Time
t
F
0.3
μ s
* Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
INDUCT IV E LOAD S WIT CHING T ES T CIRCUIT
L
C
(3)
I
C
V
CE
Vcc
I
B
(1)
R
BB(2)
V
BB
-
+
I
B1
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
V
CLAMP
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