參數(shù)資料
型號(hào): U7006B
英文描述: U7006B [Updated 7/03. 12 Pages] DECT SiGe Front-end IC with High PAE
中文描述: U7006B [更新7月3日。 12頁(yè)]無(wú)繩硅鍺前端高PAE的集成電路
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 341K
代理商: U7006B
1
4714A–DECT–07/03
Features
Single 3-V Supply Voltage
High Power-added Efficient Power Amplifier (P
out
typically 26.5 dBm)
Ramp-controlled Output Power
Low-noise Preamplifier (NF typically 1.8 dB)
Biasing for External PIN Diode T/R Switch
Current-saving Standby Mode
Few External Components
Electrostatic sensitive device.
Observe precautions for handling.
Description
The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier,
50- internal matching, low-noise amplifier and T/R switch driver. It is especially
designed for operation in TDMA systems like DECT. Due to the ramp-control feature
and a very low quiescent current, an external switch transistor for V
S
is not required.
Figure 1.
Block Diagram
PA
PA_IN
VS_PA
V1_PA
LNA
TX/RX
Standby
control
T/R
Switch
driver
LNA_OUT
RAMP
LNA_IN
PU
RX_ON
V2_PA_OUT
SWITCH_OUT
R_SWITCH
DECT SiGe
Front End IC
with High PAE
U7006B
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