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參數(shù)資料
| 型號： | U637H256DK25G1 |
| 英文描述： | CapStore 32K x 8 nvSRAM |
| 中文描述： | CapStore 32K的× 8非易失 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 158K |
| 代理商： | U637H256DK25G1 |
U637H256
2
August 15, 2006
STK Control #ML0056
Rev 1.1
EEPROM Array
512 x (64 x 8)
STORE
RECALL
SRAM
Array
512 Rows x
64 x 8 Columns
A5
A6
A7
A8
A9
A11
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Column I/O
Column Decoder
R
V
CC
V
SS
V
CC
G
E
W
A0 A1
A2 A3 A4A10
Software
Detect
A0 - A13
I
Store/
Recall
Control
Power
Control
Operating Mode
E
W
G
DQ0 - DQ7
Standby/not selected
H
*
*
High-Z
Internal Read
L
H
H
High-Z
Read
L
H
L
Data Outputs Low-Z
Write
L
L
*
Data Inputs High-Z
Truth Table forSRAM Operations
Block Diagram
Absolute Maximum Ratings
a
Symbol
Min.
Max.
Unit
Power Supply Voltage
V
CC
-0.5
7
V
Input Voltage
V
I
-0.3
V
CC
+0.5
V
Output Voltage
V
O
-0.3
V
CC
+0.5
V
Power Dissipation
P
D
1
W
Operating Temperature
C-Type
K-Type
T
a
0
-40
70
85
°
C
°
C
Storage Temperature
T
stg
-65
150
°
C
Characteristics
All voltages are referenced to V
= 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤
5 ns, measured between 10 % and 90 % of V
I
, as well as
input levels of V
= 0 V and V
= 3 V. The timing reference level of all input and output signals is 1.5 V,
with the exception of the t
dis
-times and t
en
-times, in which cases transition is measured
±
200 mV from steady-state voltage.
*
H or L
a:
Stresses greater than those listed under Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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