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參數(shù)資料
| 型號： | U635H64S2C45 |
| 英文描述： | PowerStore 8K x 8 nvSRAM |
| 中文描述： | PowerStore 8K的× 8非易失 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 149K |
| 代理商： | U635H64S2C45 |
U635H64
Obsolete - Not Recommended for New Designs
1
March 31, 2006
STK Control #ML0052
Rev 1.0
PowerStore
8K x 8 nvSRAM
Pin Configuration
Pin Description
Top View
1
2
3
n.c.
A12
A7
VCC
W
n.c.
28
27
26
4
5
6
7
8
9
10
11
A6
A5
A4
A3
A2
A1
A0
A8
A9
A11
G
A10
E
DQ7
DQ6
25
24
23
22
21
20
19
18
12
13
14
DQ1
DQ2
VSS
DQ5
DQ4
DQ3
17
16
15
DQ0
PDIP
SOP
Signal Name
Signal Description
A0 - A12
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
E
G
W
VCC
VSS
High-performance CMOS non-
volatile static RAM 8192 x 8 bits
25, 35 and 45 ns Access Times
12, 20 and 25 ns Output Enable
Access Times
I
CC
= 15 mA at 200 ns Cycle
Time
Automatic STORE to EEPROM
on Power Down using system
capacitance
Software initiated STORE
(STORE Cycle Time < 10 ms)
Automatic STORE Timing
10
5
STORE cycles to EEPROM
10 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
(RECALL Cycle Time < 20
μ
s)
Unlimited RECALL cycles from
EEPROM
Single 5 V
±
10 % Operation
Operating temperature ranges:
0 to 70
-40 to 85
QS 9000 Quality Standard
ESD characterization according-
MIL STD 883C M3015.7-HBM
(classification see IC Code
Numbers)
°
C
°
C
RoHS compliance and Pb- free
Packages:PDIP28 (600 mil)
SOP28 (330 mil)
Description
The U635H64 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U635H64 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically
erasable
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation) take place
automatically upon power down
using charge stored in system
capacitance.
PROM
Transfers from the EEPROM to the
SRAM (the RECALL operation)
take place automatically on power
up. The U635H64 combines the
high performance and ease of use
of a fast SRAM with nonvolatile
data integrity.
STORE cycles also may be initiated
under user control via a software
sequence.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or write
accesses
intervene
sequence or the sequence will be
aborted.
RECALL cycles may also be initia-
ted by a software sequence.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvolatile
information is transferred into the
SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
in
the
Features
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U635H64S2C45G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K25 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K25G1 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K35 | PowerStore 8K x 8 nvSRAM |
| U635H64S2K35G1 | PowerStore 8K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U635H64S2C45G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K25 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K25G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K35 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
| U635H64S2K35G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 8K x 8 nvSRAM |
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