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參數(shù)資料
| 型號： | U635H16BDK35 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 132K |
| 代理商： | U635H16BDK35 |
12
November 01, 2001
U635H16
Software Nonvolatile RECALL
A RECALL cycle of the EEPROM data into the SRAM
is initiated with a sequence of READ operations in a
manner similar to the STORE initiation. To initiate the
RECALL cycle the following sequence of READ opera-
tions must be performed:
1.
2.
3.
4.
5.
6.
Read address
Read address
Read address
Read address
Read address
Read address
000
555
2AA
7FF
0F0
70E
(hex) Valid READ
(hex) Valid READ
(hex) Valid READ
(hex) Valid READ
(hex) Valid READ
(hex) Initiate RECALL
Internally, RECALL is a two step procedure. First, the
SRAM data is cleared and second, the nonvolatile
information is transferred into the SRAM cells. The
RECALL operation in no way alters the data in the
EEPROM cells. The nonvolatile data can be recalled an
unlimited number of times.
Hardware Protection
The U635H16 offers hardware protection against inad-
vertent STORE operation through V
CC
Sense. When
V
CC
< V
SWITCH
all software controllod STORE operati-
ons will be inhibited.
Low Average Active Power
The U635H16 has been designed to draw significantly
less power when E is LOW (chip enabled) but the
access cycle time is longer than 55 ns.
When E is HIGH the chip consumes only standby cur-
rent.
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READs to WRITEs
5. the operating temperature
6. the V
CC
level
The information describes the type of component and shall not be considered as assured characteristics. Terms of
delivery and rights to change design reserved.
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