參數(shù)資料
型號: U634H256S2K25G1
英文描述: PowerStore 32K x 8 nvSRAM
中文描述: PowerStore 32K的× 8非易失
文件頁數(shù): 8/15頁
文件大?。?/td> 229K
代理商: U634H256S2K25G1
U634H256
8
August 15, 2006
STK Control #ML0048
Rev 1.1
PowerStore
and Automatic Power Up RECALL
Hardware Controlled STORE
DQi
Output
Previous Data Valid
HSB
t
en(H)S
t
d(H)S
Data Valid
t
dis(H)S
No.Software Controlled STORE/RECALL
Cycle
Symbol
25
35
45
Unit
Alt.
IEC
Min. Max. Min. Max. Min. Max.
29 STORE/RECALL Initiation Time
t
AVAV
t
cR
25
35
45
ns
30 Chip Enable to Output Inactive
s
t
ELQZ
t
dis(E)SR
600
600
600
ns
31 STORE Cycle Time
t
ELQXS
t
d(E)S
10
10
10
ms
32 RECALL Cycle Time
r
t
ELQXR
t
d(E)R
20
20
20
μ
s
33 Address Setup to Chip Enable
t
t
AVELN
t
su(A)SR
0
0
0
ns
34 Chip Enable Pulse Width
s, t
t
ELEHN
t
w(E)SR
20
25
30
ns
35 Chip Disable to Address Change
t
t
EHAXN
t
h(A)SR
0
0
0
ns
t
w(H)Sq
(28)
(26)
(27)
(25)
High Impedance
V
CAP
5.0 V
V
SWITCH
t
PowerStore
Power Up
RECALL
W
DQi
POWER UP
RECALL
BROWN OUT
NO STORE
t
RESTOR
E
t
RESTORE
BROWN OUT
PowerStore
(NO SRAM WRITES)
(24)
(24)
t
PDSTOREp
t
DELAYp
p:
q:
r: An automatic RECALL also takes place at power up, starting when V
CC
exceeds V
SWITCH
and takes t
RESTORE
. V
CC
must not drop below
V
SWITCH
once it has been exceeded for the RECALL to function properly.
s:
Once the software controlled STORE or RECALL cycle is initiated, it completes automatically, ignoring all inputs.
t:
Noise on the E pin may trigger multiple READ cycles from the same address and abort the address sequence.
t
PDSTORE
approximate t
d(E)S
or t
d(H)S
; t
DELAY
approximate t
dis(H)S
.
After t
w(H)S
HSB is hold down internal by STORE operation.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
U634H256S2K35G1 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM
U634H256S2K45G1 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM
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U634H256SA25G1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWERSTORE 32K X 8 NVSRAM
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