- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382708 > U634H256S2A25G1 PowerStore 32K x 8 nvSRAM PDF資料下載
參數(shù)資料
| 型號： | U634H256S2A25G1 |
| 英文描述： | PowerStore 32K x 8 nvSRAM |
| 中文描述： | PowerStore 32K的× 8非易失 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 229K |
| 代理商： | U634H256S2A25G1 |
U634H256
4
August 15, 2006
STK Control #ML0048
Rev 1.1
DC Characteristics
Symbol
Conditions
Min.
Max.
Unit
Output High Voltage
Output Low Voltage
V
OH
V
OL
V
CC
I
OH
I
OL
= 4.5 V
=-4 mA
= 8 mA
2.4
0.4
V
V
Output High Current
Output Low Current
I
OH
I
OL
V
CC
V
OH
V
OL
= 4.5 V
= 2.4 V
= 0.4 V
8
-4
mA
mA
Input Leakage Current
High
Low
I
IH
I
IL
V
CC
V
IH
V
IL
= 5.5 V
= 5.5 V
= 0 V
-1
1
μ
A
μ
A
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
I
OHZ
I
OLZ
V
CC
V
OH
V
OL
= 5.5 V
= 5.5 V
= 0 V
-1
1
μ
A
μ
A
No.Switching Characteristics
Read Cycle
Symbol
25
35
45
Unit
Alt.
IEC
Min. Max. Min. Max. Min. Max.
1 Read Cycle Time
f
t
AVAV
t
cR
25
35
45
ns
2 Address Access Time to Data Valid
g
t
AVQV
t
a(A)
25
35
45
ns
3 Chip Enable Access Time to Data Valid
t
ELQV
t
a(E)
25
35
45
ns
4 Output Enable Access Time to Data Valid
t
GLQV
t
a(G)
10
15
20
ns
5 E HIGH to Output in High-Z
h
t
EHQZ
t
dis(E)
10
13
15
ns
6 G HIGH to Output in High-Z
h
t
GHQZ
t
dis(G)
10
13
15
ns
7 E LOW to Output in Low-Z
t
ELQX
t
en(E)
5
5
5
ns
8 G LOW to Output in Low-Z
t
GLQX
t
en(G)
0
0
0
ns
9 Output Hold Time after Address Change
t
AXQX
t
v(A)
3
3
3
ns
10 Chip Enable to Power Active
e
t
ELICCH
t
PU
0
0
0
ns
11 Chip Disable to Power Standby
d, e
t
EHICCL
t
PD
25
35
45
ns
SRAM Memory Operations
e:
f:
g:
h:
Parameter guaranteed but not tested.
Device is continuously selected with E and G both LOW.
Address valid prior to or coincident with E transition LOW.
Measured
±
200 mV from steady state output voltage.
相關PDF資料 |
PDF描述 |
|---|---|
| U634H256S2A35G1 | PowerStore 32K x 8 nvSRAM |
| U634H256S2A45G1 | PowerStore 32K x 8 nvSRAM |
| U634H256S2C25G1 | PowerStore 32K x 8 nvSRAM |
| U634H256S2C35G1 | PowerStore 32K x 8 nvSRAM |
| U634H256S2C45G1 | PowerStore 32K x 8 nvSRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| U634H256S2A35G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM |
| U634H256S2A45G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM |
| U634H256S2C25G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM |
| U634H256S2C35G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM |
| U634H256S2C45G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:PowerStore 32K x 8 nvSRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。