參數(shù)資料
型號: U634H256BSK45
英文描述: NVRAM (EEPROM Based)
中文描述: NVRAM中(EEPROM的基礎(chǔ))
文件頁數(shù): 6/14頁
文件大?。?/td> 239K
代理商: U634H256BSK45
6
December 12, 1997
U634H256
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AAAA
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AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
A
A
A
A
A
AAAA
AAAA
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A
A
A
A
A
L- to H-level
undefined
H- to L-level
i:
j:
If W is LOW and when E goes LOW, the outputs remain in the high impedance state.
E or W must be V
IH
during address transition.
Write Cycle #1: W-controlled
j
Write Cycle #2: E-controlled
j
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
su(E)
t
h(A)
t
w(W)
t
su(D)
t
dis(W)
t
en(W)
Address Valid
Input Data
High Impedance
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t
su(A-WH)
12
16
13
19
20
23
21
t
su(A)
t
h(D)
Ai
E
W
DQi
Input
DQi
Output
t
cW
t
w(E)
t
h(A)
t
su(D)
Input Data
t
su(W)
12
18
21
20
19
17
22
Previous Data
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15
t
su(A)
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AAA
15
14
High Impedance
Address Valid
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AA
AA
AA
AA
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AAAA
AA
AA
AA
AA
AAAA
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AAAA
AAAA
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AAAA
AAAA
AAAA
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AAA
AAA
AAA
AAA
AAAA
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AAAA
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A
A
A
A
相關(guān)PDF資料
PDF描述
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