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參數(shù)資料
| 型號： | U632H64BDC25 |
| 英文描述： | NVRAM (EEPROM Based) |
| 中文描述： | NVRAM中（EEPROM的基礎(chǔ)） |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 155K |
| 代理商： | U632H64BDC25 |
5
November 01, 2001
U632H64
Read Cycle 1: Ai-controlled (during Read cycle: E = G = V
IL
, W = V
IH
)
f
Read Cycle 2: G-, E-controlled (during Read cycle: W = V
IH
)
g
No.
Switching Characteristics
Write Cycle
Symbol
25
35
45
Unit
Alt. #1
Alt. #2
IEC
Min. Max. Min. Max. Min. Max.
12
Write Cycle Time
t
AVAV
t
AVAV
t
cW
25
35
45
ns
13
Write Pulse Width
t
WLWH
t
w(W)
20
30
35
ns
14
Write Pulse Width Setup Time
t
WLEH
t
su(W)
20
30
35
ns
15
Address Setup Time
t
AVWL
t
AVEL
t
su(A)
0
0
0
ns
16
Address Valid to End of Write
t
AVWH
t
AVEH
t
su(A-WH)
20
30
35
ns
17
Chip Enable Setup Time
t
ELWH
t
su(E)
20
30
35
ns
18
Chip Enable to End of Write
t
ELEH
t
w(E)
20
30
35
ns
19
Data Setup Time to End of Write
t
DVWH
t
DVEH
t
su(D)
12
18
20
ns
20
Data Hold Time after End of Write
t
WHDX
t
EHDX
t
h(D)
0
0
0
ns
21
Address Hold after End of Write
t
WHAX
t
EHAX
t
h(A)
0
0
0
ns
22
W LOW to Output in High-Z
h, i
t
WLQZ
t
dis(W)
10
13
15
ns
23
W HIGH to Output in Low-Z
t
WHQX
t
en(W)
5
5
5
ns
t
a(A)
Previous Data Valid
Output Data Valid
t
cR
Address Valid
t
v(A)
Ai
DQi
Output
(1)
(2)
(9)
Ai
E
G
DQi
Output
t
dis(E)
t
cR
t
a(E)
t
en(E)
t
en(G)
t
a(G)
t
dis(G)
Address Valid
t
a(A)
(2)
Output Data Valid
High Impedance
I
CC
ACTIVE
STANDBY
t
PD
t
PU
(1)
(3)
(4)
(5)
(7)
(6)
(8)
(10)
(11)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U632H64BDC35 | NVRAM (EEPROM Based) |
| U632H64BDC45 | NVRAM (EEPROM Based) |
| U632H64BDK25 | NVRAM (EEPROM Based) |
| U632H64BDK35 | NVRAM (EEPROM Based) |
| U632H64BDK45 | NVRAM (EEPROM Based) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U632H64BDC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64BDC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U632H64BDK25 | 制造商:Cypress Semiconductor 功能描述: |
| U632H64BDK25G1 | 制造商:Cypress Semiconductor 功能描述: |
| U632H64BDK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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