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參數(shù)資料
| 型號(hào)： | U631H256SC25G1 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SoftStore 32K x 8 nvSRAM |
| 中文描述： | SoftStore 32K的× 8非易失 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | U631H256SC25G1 |
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U631H256
1
March 31, 2006
STK Control #ML0043
Rev 1.0
SoftStore
32K x 8 nvSRAM
The U631H256 has two separate
modes of operation: SRAM mode
and nonvolatile mode. In SRAM
mode, the memory operates as an
ordinary static RAM. In nonvolatile
operation, data is transferred in
parallel from SRAM to EEPROM or
from EEPROM to SRAM. In this
mode SRAM functions are disab-
led.
The U631H256 is a fast static RAM
(25 ns), with a nonvolatile electri-
cally erasable PROM (EEPROM)
element incorporated in each static
memory cell. The SRAM can be
read and written an unlimited num-
ber of times, while independent
nonvolatile
data
EEPROM. Data transfers from the
SRAM to the EEPROM (the
STORE operation), or from the
EEPROM to the SRAM (the
RECALL operation) are initiated
through software sequences.
The U631H256 combines the high
performance and ease of use of a
fast SRAM with nonvolatile data
integrity.
resides
in
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Because a sequence of addresses
is used for STORE initiation, it is
important that no other read or
write accesses intervene in the
sequence or the sequence will be
aborted.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
The U631H256 is pin compatible
with standard SRAMs.
Pin Configuration
Pin Description
Top View
1
2
3
A14
A12
A7
VCC
W
A13
28
27
26
4
5
6
7
8
9
10
11
A6
A5
A4
A3
A2
A1
A0
A8
A9
A11
G
A10
E
DQ7
DQ6
25
24
23
22
21
20
19
18
12
13
14
DQ1
DQ2
VSS
DQ5
DQ4
DQ3
17
16
15
DQ0
SOP
Signal Name
Signal Description
A0 - A14
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Power Supply Voltage
Ground
E
G
W
VCC
VSS
Features
Description
High-performance CMOS non-
volatile static RAM 32768 x 8 bits
25 ns Access Times
10 ns Output Enable Access
Times
Software STORE Initiation
Automatic STORE Timing
10
6
STORE cycles to EEPROM
100 years data retention in
EEPROM
Automatic RECALL on Power Up
Software RECALL Initiation
Unlimited RECALL cycles from
EEPROM
Unlimited Read and Write to
SRAM
Single 5 V
±
10 % Operation
Operating temperature ranges:
0 to 70
°
C
-40 to 85
°
C
QS 9000 Quality Standard
ESD protection > 2000 V
(MIL STD 883C M3015.7-HBM)
RoHS compliance and Pb- free
Package: SOP28 (330 mil)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U631H256SK25G1 | SoftStore 32K x 8 nvSRAM |
| U632H16 | PowerStore 2K x 8 nvSRAM |
| U632H16SC25G1 | PowerStore 2K x 8 nvSRAM |
| U632H16SC25Z0425G1 | PowerStore 2K x 8 nvSRAM |
| U632H16SK25G1 | PowerStore 2K x 8 nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U631H256SK25G1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SoftStore 32K x 8 nvSRAM |
| U631H256XS | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:SoftStore 32K x 8 nvSRAM Die |
| U631H64 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SoftStore 8K x 8 nvSRAM |
| U631H64BDC25 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:SoftStore 8K x 8 nvSRAM |
| U631H64BDC25G1 | 制造商:SIMTEK 制造商全稱:Simtek Corporation 功能描述:SoftStore 8K x 8 nvSRAM |
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