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參數(shù)資料
| 型號(hào)： | U630H64 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | HardStore 8K x 8 nvSRAM |
| 中文描述： | HardStore 8K的× 8非易失 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | U630H64 |
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April 7, 2005
U630H64
S
High-performance CMOS nonvola-
tile static RAM 8192 x 8 bits
S
25, 35 and 45 ns Access Times
S
12, 20 and 25 ns Output Enable
Access Times
S
Hardware STORE Initiation
(STORE Cycle Time < 10 ms)
S
Automatic STORE Timing
S
10
5
STORE cycles to EEPROM
S
10 years data retention in
EEPROM
S
Automatic RECALL on Power Up
S
Hardware RECALL Initiation
(RECALL Cycle Time < 20
μ
s)
S
Unlimited RECALL cycles from
EEPROM
S
Unlimited Read and Write to SRAM
S
Single 5 V
±
10 % Operation
S
Operating temperature ranges:
0 to 70 °C
-40 to 85
°
C
S
QS 9000 Quality Standard
S
ESD characterization according
MIL STD 883C M3015.7-HBM
(classification see IC Code
Numbers)
S
RoHS compliance and Pb- free
S
Packages: PDIP28 (300 mil)
SOP28 (330 mil)
The U630H64 has two separate
modes of operation: SRAM mode
and nonvolatile mode, determined
by the state of the NE pin.
In SRAM mode, the memory ope-
rates as an ordinary static RAM. In
nonvolatile operation, data is
transferred in parallel from SRAM
to EEPROM or from EEPROM to
SRAM. In this mode SRAM
functions are disabled.
The U630H64 is a fast static RAM
(25, 35, 45 ns), with a nonvolatile
electrically
erasable
(EEPROM) element incorporated
in each static memory cell. The
SRAM can be read and written an
unlimited number of times, while
independent nonvolatile data resi-
des in EEPROM. Data transfers
from the SRAM to the EEPROM
(the STORE operation), or from
the
EEPROM to the SRAM (the
RECALL operation) are initiated
through the state of the NE pin.
The U630H64 combines the high
performance and ease of use of a
fast SRAM with nonvolatile data
PROM
integrity.
Once a STORE cycle is initiated,
further input or output are disabled
until the cycle is completed.
Internally, RECALL is a two step
procedure. First, the SRAM data is
cleared and second, the nonvola-
tile information is transferred into
the SRAM cells.
The RECALL operation in no way
alters the data in the EEPROM
cells. The nonvolatile data can be
recalled an unlimited number of
times.
Pin Configuration
Pin Description
HardStore
8K x 8 nvSRAM
Top View
1
NE
VCC
28
2
A12
A7
W
27
4
A6
A8
A9
25
5
A5
24
23
3
n.c.
26
6
A4
A11
7
A3
A2
G
22
8
9
A10
21
12
DQ1
DQ2
DQ5
17
A1
E
20
10
A0
DQ7
DQ6
19
18
11
DQ0
13
DQ4
16
14
VSS
DQ3
15
PDIP
SOP
Signal Name
Signal Description
A0 - A12
DQ0 - DQ7
Address Inputs
Data In/Out
Chip Enable
Output Enable
Write Enable
Nonvolatile Enable
Power Supply Voltage
Ground
E
G
W
NE
VCC
VSS
Features
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U631H64 | SoftStore 8K x 8 nvSRAM |
| U634H256D1C25 | POWERSTORE 32K X 8 NVSRAM |
| U634H256D1C25G1 | POWERSTORE 32K X 8 NVSRAM |
| U634H256D1C35 | POWERSTORE 32K X 8 NVSRAM |
| U634H256D1C35G1 | POWERSTORE 32K X 8 NVSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U630H64BDC25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BDC35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BDC45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BDK25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
| U630H64BDK35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (EEPROM Based) |
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