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參數(shù)資料
| 型號： | U6264BS2K07LL |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | STANDARD 5K X 8 SRAM |
| 中文描述： | 標(biāo)準(zhǔn)5K × 8的SRAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 162K |
| 代理商： | U6264BS2K07LL |
1
April 20, 2004
U6264B
Standard 8K x 8 SRAM
The U6264B is a static RAM manu-
factured using a CMOS process
technology with the following ope-
rating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
6-transistor cell.
The circuit is activated by the rising
edge of E2 (at E1 = L), or the falling
edge of E1 (at E2 = H). The
address and control inputs open
simultaneously. According to the
information of W and G, the data
inputs, or outputs, are active. In a
Read cycle, the data outputs are
activated by the falling edge of G,
afterwards the data word read will
be available at the outputs DQ0 -
DQ7. After the address change, the
data outputs go High-Z until the
new read information is available.
The data outputs have no preferred
state. If the memory is driven by
CMOS levels in the active state,
and if there is no change of the
address, data input and control
signals W or G, the operating cur-
rent (at I
O
= 0 mA) drops to the
value of the operating current in the
Standby mode. The Read cycle is
finished by the falling edge of E2 or
W, or by the rising edge of E1,
respectively.
Data retention is guaranteed down
to 2 V. With the exception of E2, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required. This gate circuit
allows to achieve low power
standby requirements by activation
with TTL-levels too.
If the circuit is inactivated by
E2 = L, the standby current (TTL)
drops to 150
μ
A typ.
!
8192 x 8 bit static CMOS RAM
!
70 ns Access Times
!
Common data inputs and
outputs
!
Three-state outputs
!
Typ. operating supply current
70 ns: 10 mA
!
Standby current:
< 2
μ
A at T
a
≤
70 °C
!
Data retention current at 2 V:
< 1
μ
A at T
a
≤
70 °C
!
TTL/CMOS-compatible
!
Automatic reduction of power
dissipation in long Read or Write
cycles
!
Power supply voltage 5 V
!
Operating temperature ranges:
0 to 70
°
C
-40 to 85
°
C
-40 to 125 °C
!
QS 9000 Quality Standard
!
ESD protection > 2000 V
(MIL STD 883C M3015.7)
!
Latch-up immunity > 100 mA
!
Packages: PDIP28 (600 mil)
SOP28 (330 mil)
Pin Description
Signal Name
Signal Description
A0 - A12
Address Inputs
DQ0 - DQ7
Data In/Out
E1
Chip Enable 1
E2
Chip Enable 2
G
Output Enable
W
Write Enable
VCC
Power Supply Voltage
VSS
Ground
n.c.
not connected
Pin Configuration
1
2
3
n.c.
A12
A7
VCC
W (WE)
E2 (CE2)
28
27
26
4
5
6
7
8
9
10
11
A6
A5
A4
A3
A2
A1
A0
A8
A9
A11
G (OE)
A10
E1 (CE1)
DQ7
DQ6
25
24
23
22
21
20
19
18
12
13
14
DQ1
DQ2
VSS
DQ5
DQ4
DQ3
17
16
15
DQ0
PDIP
SOP
Top View
Features
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U6264BS2K07LLG1 | STANDARD 5K X 8 SRAM |
| U6264BSA07 | STANDARD 5K X 8 SRAM |
| U6264BSC07 | STANDARD 5K X 8 SRAM |
| U6264BSC07G1 | STANDARD 5K X 8 SRAM |
| U6264BSC07LL | STANDARD 5K X 8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U6264BS2K07LLDG1 | 制造商:Alliance Memory Inc 功能描述:U6264B Series 64-kbit (8 K x 8) 5 V 70 ns CMOS Static RAM - SOIC-28 |
| U6264BS2K07LLG1 | 功能描述:靜態(tài)隨機(jī)存取存儲器 ZMD 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| U6264BS2K07LLG1TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 ZMD 8K x 8 5V Asynch RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| U6264BSA07 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STANDARD 5K X 8 SRAM |
| U6264BSA07G1 | 制造商:ZMD 制造商全稱:Zentrum Mikroelektronik Dresden AG 功能描述:STANDARD 5K X 8 SRAM |
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